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| P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -20A, RDS(ON) = 42m @VGS = -10V. RDS(ON) = 65m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED4301/CEU4301 D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -40 Units V V A A W W/ C C 20 -20 -80 31 0.25 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RJC RJA Limit 4 50 Units C/W C/W Details are subject to change without notice . 1 Rev 4. 2010.Feb http://www.cetsemi.com CED4301/CEU4301 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -1A VDS = -20V, ID = -5A, VGS = -10V VDD = -20V, ID = -5A, VGS = -10V, RGEN = 3 12 5 33 4 20 2.5 3.5 -20 -1.3 24 30 66 8 26 ns ns ns ns nC nC nC A V d TA = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS b Ciss Coss Crss Test Condition VGS = 0V, ID = -250A VDS = -32V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250A VGS = -10V, ID = -12A VGS = -4.5V, ID = -8A VDS = -5V, ID = -4.8A VDS = -20V, VGS = 0V, f = 1.0 MHz -1 32 50 12 1125 150 100 Min -40 -1 100 -100 -3 42 65 Typ Max Units V A 5 nA nA V m m S pF pF pF Forward Transconductance Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 CED4301/CEU4301 25 -VGS=10,8,6V 35 -ID, Drain Current (A) 15 10 5 0 -VGS=5.0V -ID, Drain Current (A) 20 28 21 14 25 C 7 TJ=125 C -55 C 2 3 4 5 0 -VGS=4.0V -VGS=3.0V 0 1 2 3 4 5 0 1 -VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 1500 1250 1000 750 500 250 0 Coss Crss 0 5 10 15 20 25 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 -VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics ID=-12A VGS=-10V C, Capacitance (pF) Ciss RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature -IS, Source-drain current (A) VGS=0V 10 2 VTH, Normalized Gate-Source Threshold Voltage ID=-250A 10 1 -25 0 25 50 75 100 125 150 10 0 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature -VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 3 CED4301/CEU4301 -VGS, Gate to Source Voltage (V) 10 8 6 4 2 0 VDS=-20V ID=-5A 10 2 RDS(ON)Limit 1ms 10ms 100ms DC -ID, Drain Current (A) 10 1 10 0 5 10 -1 0 4 8 12 16 20 10 -2 TC=25 C TJ=150 C Single Pulse 10 -2 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT -VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area toff tr 90% td(off) 90% 10% tf 10% INVERTED 90% S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 Single Pulse PDM t1 t2 10 -2 1. RcJC (t)=r (t) * RcJC 2. RcJC=See Datasheet 3. TJM-TC = P* RcJC (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4 |
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